HGT1S20N35F3VLR4505
Harris Corporation
Harris Corporation
40A, 350V, UFS N-CHANNEL IGBT
$1.62
Available to order
Reference Price (USD)
1+
$1.62000
500+
$1.6038
1000+
$1.5876
1500+
$1.5714
2000+
$1.5552
2500+
$1.539
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGT1S20N35F3VLR4505 Single IGBT transistor by Harris Corporation is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The HGT1S20N35F3VLR4505 ensures precise power control and long-term stability. With Harris Corporation's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate HGT1S20N35F3VLR4505 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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