HGT1S20N60C3S9A
onsemi
onsemi
IGBT 600V 45A TO263AB
$0.00
Available to order
Reference Price (USD)
800+
$2.71540
1,600+
$2.31098
2,400+
$2.20728
Exquisite packaging
Discount
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Experience top-tier performance with the HGT1S20N60C3S9A Single IGBT transistor from onsemi. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the HGT1S20N60C3S9A ensures energy efficiency and reliability. Trust onsemi's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
- Power - Max: 164 W
- Switching Energy: 295µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 91 nC
- Td (on/off) @ 25°C: 28ns/151ns
- Test Condition: 480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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