HGT1S3N60B3DS
Harris Corporation
Harris Corporation
7A, 600V, UFS N-CHANNEL IGBT
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Enhance your electronic projects with the HGT1S3N60B3DS Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the HGT1S3N60B3DS ensures precision and reliability. Harris Corporation's cutting-edge technology guarantees a component that meets the highest industry standards. Choose HGT1S3N60B3DS for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 7 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
- Power - Max: 33.3 W
- Switching Energy: 66µJ (on), 88µJ (off)
- Input Type: Standard
- Gate Charge: 18 nC
- Td (on/off) @ 25°C: 18ns/105ns
- Test Condition: 480V, 3.5A, 82Ohm, 15V
- Reverse Recovery Time (trr): 28 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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