HGT1S7N60A4DS9A
Fairchild Semiconductor
Fairchild Semiconductor
IGBT, 34A, 600V, N-CHANNEL
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The HGT1S7N60A4DS9A Single IGBT transistor by Fairchild Semiconductor is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the HGT1S7N60A4DS9A provides consistent performance in varied conditions. Rely on Fairchild Semiconductor's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 34 A
- Current - Collector Pulsed (Icm): 56 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
- Power - Max: 125 W
- Switching Energy: 120µJ (on), 60µJ (off)
- Input Type: Standard
- Gate Charge: 60 nC
- Td (on/off) @ 25°C: 11ns/100ns
- Test Condition: 390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr): 34 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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