HGT1S7N60B3
Harris Corporation
Harris Corporation
14A, 600V, N-CHANNEL IGBT
$0.90
Available to order
Reference Price (USD)
1+
$0.90000
500+
$0.891
1000+
$0.882
1500+
$0.873
2000+
$0.864
2500+
$0.855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the HGT1S7N60B3 Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the HGT1S7N60B3 delivers consistent and reliable operation. Trust Harris Corporation's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 56 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
- Power - Max: 60 W
- Switching Energy: 160µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 26ns/130ns
- Test Condition: 480V, 7A, 50Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
Related Products
onsemi
ISL9V3040P3-F085C
Infineon Technologies
IKFW75N60ETXKSA1
IXYS
IXXX200N60B3
Infineon Technologies
IKN04N60RC2ATMA1
IXYS
IXGT72N60A3-TRL
Infineon Technologies
AIKQ120N75CP2XKSA1
IXYS
IXGA20N250HV-TRL
Infineon Technologies
IHW40N65R6XKSA1
onsemi
FGB3236-F085C
IXYS