HGT4E30N60B3S
Harris Corporation
Harris Corporation
IGBT 60A, 600V, N CHANNEL, TO 26
$4.43
Available to order
Reference Price (USD)
1+
$4.43000
500+
$4.3857
1000+
$4.3414
1500+
$4.2971
2000+
$4.2528
2500+
$4.2085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the HGT4E30N60B3S Bipolar Junction Transistor (BJT) by Harris Corporation. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the HGT4E30N60B3S is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Harris Corporation for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
JANSP2N2906AUBC
Central Semiconductor Corp
2N2904 PBFREE
Microchip Technology
JANS2N2221UA/TR
Microchip Technology
JANS2N5666U3
Microchip Technology
JANSP2N2907AUA
Microchip Technology
JANTXV2N5416
Microchip Technology
2N2443
Sanyo
2SC4521T-TD-E-SY
Microchip Technology
JANTXV2N3421P
Toshiba Semiconductor and Storage