HGT4E30N60C3S
Harris Corporation
Harris Corporation
IGBT 60A, 600V, N CHANNEL, TO 26
$4.74
Available to order
Reference Price (USD)
1+
$4.74000
500+
$4.6926
1000+
$4.6452
1500+
$4.5978
2000+
$4.5504
2500+
$4.503
Exquisite packaging
Discount
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Optimize your electronic systems with the HGT4E30N60C3S Bipolar Junction Transistor (BJT) from Harris Corporation. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the HGT4E30N60C3S delivers superior performance in diverse environments. Harris Corporation's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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