HGTD7N60B3
Harris Corporation
Harris Corporation
14A, 600V, N-CHANNEL IGBT
$0.68
Available to order
Reference Price (USD)
1+
$0.68000
500+
$0.6732
1000+
$0.6664
1500+
$0.6596
2000+
$0.6528
2500+
$0.646
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience top-tier performance with the HGTD7N60B3 Single IGBT transistor from Harris Corporation. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the HGTD7N60B3 ensures energy efficiency and reliability. Trust Harris Corporation's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 56 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
- Power - Max: 60 W
- Switching Energy: 160µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 26ns/130ns
- Test Condition: 480V, 7A, 50Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: I-PAK
Related Products
onsemi
NGTB50N65FL2WAG
IXYS
IXG70IF1200NA
IXYS
IXYK30N170CV1
Harris Corporation
HGTG40N60C3
IXYS
IXYX120N120B3
Toshiba Semiconductor and Storage
GT40RR21(STA1,E
Renesas Electronics America Inc
RBN40H65T1FPQ-A0#CB0
Infineon Technologies
FP150R07N3E4_B11
onsemi
TIG032TS-TL-H
Infineon Technologies