HGTG12N60C3D
Harris Corporation
Harris Corporation
UFS SERIES N-CH IGBT
$0.00
Available to order
Reference Price (USD)
1+
$6.69000
10+
$6.00900
450+
$4.67113
900+
$4.19139
1,350+
$3.53491
Exquisite packaging
Discount
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Experience top-tier performance with the HGTG12N60C3D Single IGBT transistor from Harris Corporation. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the HGTG12N60C3D ensures energy efficiency and reliability. Trust Harris Corporation's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
- Power - Max: 104 W
- Switching Energy: 380µJ (on), 900µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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