HGTP12N60A4D
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.68
Available to order
Reference Price (USD)
1+
$2.94000
10+
$2.63700
100+
$2.11930
800+
$1.74121
1,600+
$1.44272
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGTP12N60A4D from Fairchild Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose HGTP12N60A4D for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
- Power - Max: 167 W
- Switching Energy: 55µJ (on), 50µJ (off)
- Input Type: Standard
- Gate Charge: 78 nC
- Td (on/off) @ 25°C: 17ns/96ns
- Test Condition: 390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr): 30 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
STMicroelectronics
STGP8NC60KD
IXYS
IXYK200N65B3
Infineon Technologies
IRGP4263PBF
IXYS
IXGH30N120C3H1
Fairchild Semiconductor
FGA40T65UQDF
Infineon Technologies
IKFW50N60DH3XKSA1
STMicroelectronics
STGW20H60DF
NTE Electronics, Inc
NTE3322
onsemi
FGL60N100BNTD
onsemi