HGTP12N60C3
onsemi
onsemi
IGBT 600V 24A 104W TO220AB
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Enhance your electronic projects with the HGTP12N60C3 Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the HGTP12N60C3 ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose HGTP12N60C3 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: 380µJ (on), 900µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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