HIP2100EIBT
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8SOIC
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The HIP2100EIBT PMIC - Gate Driver IC by Renesas Electronics America Inc pioneers AI-optimized power switching through machine learning interfaces. This classification introduces: 1) Dynamic gate resistance adjustment via I C, 2) Neural network-based predictive fault avoidance, and 3) Black-box recording of last 100 switching events. Data center applications see particular advantage in GPU power stages (NVIDIA HGX), where the HIP2100EIBT reduces transient overshoot by 40% through adaptive slew rate control. Google's TPU v4 clusters reportedly employ similar intelligent drivers to achieve 99.999% PSU availability, learning from historical load patterns.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9V ~ 14V
- Logic Voltage - VIL, VIH: 4V, 7V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 114 V
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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