HN1A01F-Y(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 50V 0.15A SM6
$0.00
Available to order
Reference Price (USD)
3,000+
$0.08820
Exquisite packaging
Discount
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Optimize your BOM with the HN1A01F-Y(TE85L,F) by Toshiba Semiconductor and Storage, a cost-effective BJT Array without compromising quality. This general-purpose Discrete Semiconductor Product suits universal motor controls, lighting dimmers, and security system triggers. Educational institutions and prototyping labs favor its breadboard-friendly pinout. The HN1A01F-Y(TE85L,F) includes built-in reverse polarity protection, safeguarding circuits during accidental miswiring in field installations.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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