HN1A01FE-GR,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q PNP + PNP TR VCEO:-50
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
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Engineered for reliability, the HN1A01FE-GR,LXHF BJT Array from Toshiba Semiconductor and Storage delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The HN1A01FE-GR,LXHF shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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