HN1B04FE-GR,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A ES6
$0.31
Available to order
Reference Price (USD)
4,000+
$0.05313
8,000+
$0.04620
12,000+
$0.03927
28,000+
$0.03696
100,000+
$0.03080
Exquisite packaging
Discount
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Precision meets power in the HN1B04FE-GR,LF BJT Array by Toshiba Semiconductor and Storage. Specifically engineered for Class-B audio amplifiers and active filters, this Discrete Semiconductor Product delivers THD<0.1% for studio-grade sound reproduction. Telecommunications infrastructure and test equipment manufacturers rely on its stable beta characteristics across temperature ranges. The HN1B04FE-GR,LF comes with anti-oxidation terminals, ensuring solderability even after prolonged storage.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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