HN1C03FU-A(TE85L,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN 20V 0.3A US6
$0.45
Available to order
Reference Price (USD)
3,000+
$0.12647
6,000+
$0.11881
15,000+
$0.11114
30,000+
$0.10220
Exquisite packaging
Discount
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The HN1C03FU-A(TE85L,F from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision amplification and switching applications. This Discrete Semiconductor Product integrates multiple transistors in a single package, offering enhanced thermal stability and space-saving benefits. Ideal for analog circuits, motor control, and signal processing, the HN1C03FU-A(TE85L,F ensures reliable performance in industrial automation, automotive electronics, and consumer devices. Its compact design and low power consumption make it a preferred choice for engineers seeking efficiency and durability.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
- Power - Max: 200mW
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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