HN2S02JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE ARRAY SCHOTTKY 40V ESV
$0.51
Available to order
Reference Price (USD)
4,000+
$0.08600
8,000+
$0.07740
12,000+
$0.06880
28,000+
$0.06450
100,000+
$0.06020
Exquisite packaging
Discount
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The HN2S02JE(TE85L,F) from Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products family, offering unmatched rectification efficiency in compact diode arrays. Designed for high-density PCB layouts, this product excels in bridge rectifiers and polarity protection circuits. Its low leakage current and high-temperature stability make it a favorite for telecommunications, consumer electronics, and medical devices. Choose Toshiba Semiconductor and Storage's HN2S02JE(TE85L,F) for applications where space-saving design meets industrial-grade reliability.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 40 V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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