HN4C06J-BL(TE85L,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2 NPN 120V 100MA SC74A
$0.11
Available to order
Reference Price (USD)
3,000+
$0.11088
Exquisite packaging
Discount
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Engineered for reliability, the HN4C06J-BL(TE85L,F BJT Array from Toshiba Semiconductor and Storage delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The HN4C06J-BL(TE85L,F shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Not For New Designs
- Transistor Type: 2 NPN (Dual) Common Emitter
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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