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HN4K03JUTE85LF

Toshiba Semiconductor and Storage
HN4K03JUTE85LF Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 100MA USV
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-SSOP
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353

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