HS8K1TB
Rohm Semiconductor
Rohm Semiconductor
30V NCH+NCH POWER MOSFET
$0.92
Available to order
Reference Price (USD)
1+
$0.92000
500+
$0.9108
1000+
$0.9016
1500+
$0.8924
2000+
$0.8832
2500+
$0.874
Exquisite packaging
Discount
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The HS8K1TB by Rohm Semiconductor is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the HS8K1TB provides reliable operation under stringent conditions. Rohm Semiconductor's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
- Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: HSML3030L10
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