HSD226KRF-E
Renesas Electronics America Inc
Renesas Electronics America Inc
SCHOTTKY BARRIER DIODE
$0.10
Available to order
Reference Price (USD)
1+
$0.10000
500+
$0.099
1000+
$0.098
1500+
$0.097
2000+
$0.096
2500+
$0.095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HSD226KRF-E by Renesas Electronics America Inc is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The HSD226KRF-E is also used in smart home devices and wearable technology, ensuring seamless operation. Renesas Electronics America Inc's expertise in semiconductor technology guarantees that the HSD226KRF-E delivers top-notch performance in any application.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 25 V
- Current - Average Rectified (Io): 50mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 380 mV @ 5 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 450 nA @ 20 V
- Capacitance @ Vr, F: 2.8pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: 2-SFP
- Operating Temperature - Junction: 125°C (Max)
Related Products
Microchip Technology
R4240F
Panjit International Inc.
PG604R_R2_00001
Sanken
AU02V
onsemi
SURA8105T3G-VF01
SMC Diode Solutions
S4D08120A
Microchip Technology
UFS510GE3/TR13
Vishay General Semiconductor - Diodes Division
V8PA6HM3/I
Microchip Technology
CD5818
IXYS
W3708MC320
Microchip Technology