HTNFET-DC
Honeywell Aerospace
Honeywell Aerospace
MOSFET N-CH 55V 8-DIP
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Reference Price (USD)
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$406.00000
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Enhance your electronic projects with the HTNFET-DC single MOSFET from Honeywell Aerospace. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Honeywell Aerospace's HTNFET-DC for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
- Vgs (Max): 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 28 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tj)
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: -
- Package / Case: 8-CDIP Exposed Pad
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