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HTNFET-T

Honeywell Aerospace
HTNFET-T Preview
Honeywell Aerospace
MOSFET N-CH 55V 4POWER TAB
$465.00
Available to order
Reference Price (USD)
1+
$434.00000
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
  • Vgs (Max): 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 28 V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tj)
  • Operating Temperature: -55°C ~ 225°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-Power Tab
  • Package / Case: 4-SIP

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