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HUF75639S3STNL

Fairchild Semiconductor
HUF75639S3STNL Preview
Fairchild Semiconductor
56A, 100V, 0.025OHM, N-CHANNEL P
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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