HUF75652G3
onsemi
onsemi
MOSFET N-CH 100V 75A TO247-3
$10.50
Available to order
Reference Price (USD)
1+
$7.87000
10+
$7.05500
450+
$5.27849
900+
$4.32216
1,350+
$4.04893
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the HUF75652G3 by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The HUF75652G3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 515W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IRF7831TRPBF
Infineon Technologies
IRF8736TRPBF
Diodes Incorporated
DMN30H4D0L-13
IXYS
IXFH20N60
Rohm Semiconductor
R6024ENX
Vishay Siliconix
SQJ443EP-T2_GE3
STMicroelectronics
STP11NK40Z
Microchip Technology
APT10M11JVRU3
onsemi
FDPF5N60NZ
onsemi