HUF76639P3
onsemi
onsemi
MOSFET N-CH 100V 51A TO220-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the HUF76639P3 by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the HUF76639P3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Toshiba Semiconductor and Storage
TPCC8001-H(TE12LQM
Diodes Incorporated
ZVN4210GTC
Infineon Technologies
BSZ0909LSATMA1
IXYS
IXUC200N055
Alpha & Omega Semiconductor Inc.
AO4403L
Infineon Technologies
IPI90R340C3XKSA1
Infineon Technologies
IRFS4710PBF
NXP USA Inc.
BUK7628-100A/C,118
STMicroelectronics
STB20N60M2-EP
onsemi