HUFA76609D3ST_NL
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HUFA76609D3ST_NL from Fairchild Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Fairchild Semiconductor's HUFA76609D3ST_NL for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 49W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Fairchild Semiconductor
FDD6682
Vishay Siliconix
SI7326DN-T1-E3
Nexperia USA Inc.
PMV90ENER
Infineon Technologies
IPI65R280C6XKSA1
Vishay Siliconix
SIDR626LEP-T1-RE3
onsemi
FDB045AN08A0
Toshiba Semiconductor and Storage
TK7A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
SSM3K341TU,LXHF
IXYS
IXTP150N15X4
Infineon Technologies