IAUA200N04S5N010ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(20V 40V)
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IAUA200N04S5N010ATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IAUA200N04S5N010ATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
Related Products
Infineon Technologies
BSS306NL6327HTSA1
Sanken
SKI07074
Infineon Technologies
BTS115AE6327
Vishay Siliconix
IRLD014
Infineon Technologies
IRFHS9301TR2PBF
onsemi
CPH6341-TL-EX
Infineon Technologies
IRF6619TRPBF
Rohm Semiconductor
R6035ENZC8
Infineon Technologies
BSP315PE6327T
onsemi