IAUC26N10S5L245ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-TDSON-8
$0.58
Available to order
Reference Price (USD)
1+
$0.57820
500+
$0.572418
1000+
$0.566636
1500+
$0.560854
2000+
$0.555072
2500+
$0.54929
Exquisite packaging
Discount
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Optimize your power electronics with the IAUC26N10S5L245ATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IAUC26N10S5L245ATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
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