IAUC50N08S5L096ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-TDSON-8
$0.71
Available to order
Reference Price (USD)
1+
$0.70940
500+
$0.702306
1000+
$0.695212
1500+
$0.688118
2000+
$0.681024
2500+
$0.67393
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IAUC50N08S5L096ATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IAUC50N08S5L096ATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 24µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
DMN2025U-13
Renesas Electronics America Inc
2SJ196-T-AZ
Infineon Technologies
IPP04CN10NGXKSA1
onsemi
NVMTSC4D3N15MC
Fairchild Semiconductor
FQPF9P25YDTU
Microchip Technology
APTM10SKM02G
Renesas Electronics America Inc
RJK0394DPA-02#J53
Vishay Siliconix
SIHB186N60EF-GE3
Infineon Technologies
IPA65R420CFDXKSA2
Diodes Incorporated