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IAUS300N08S5N014ATMA1

Infineon Technologies
IAUS300N08S5N014ATMA1 Preview
Infineon Technologies
MOSFET N-CH 80V 300A HSOG-8
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Specifications

  • Product Status: Discontinued at Digi-Key
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8-1
  • Package / Case: 8-PowerSMD, Gull Wing

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