IAUS300N10S5N014ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-HSOG-8
$5.48
Available to order
Reference Price (USD)
1+
$5.47740
500+
$5.422626
1000+
$5.367852
1500+
$5.313078
2000+
$5.258304
2500+
$5.20353
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IAUS300N10S5N014ATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IAUS300N10S5N014ATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSFN
Related Products
Diodes Incorporated
DMP2043UCA3-7
Renesas Electronics America Inc
2SK3115B(1)-S32-AY
Infineon Technologies
IPF039N08NF2SATMA1
Diodes Incorporated
DMN2053UW-13
Infineon Technologies
IPI45N06S4L08AKSA3
Infineon Technologies
IPT044N15N5ATMA1
Diodes Incorporated
DMNH4006SPSQ-13
Diodes Incorporated
DMT12H007LPS-13
Taiwan Semiconductor Corporation
TSM043NB04CZ
Infineon Technologies