IAUT165N08S5N029ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 165A 8HSOF
$4.67
Available to order
Reference Price (USD)
2,000+
$1.88771
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IAUT165N08S5N029ATMA2 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IAUT165N08S5N029ATMA2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
Panjit International Inc.
PJD50N04-AU_L2_000A1
Toshiba Semiconductor and Storage
TK8P60W5,RVQ
Rohm Semiconductor
RRL025P03FRATR
onsemi
FDD3N50NZTM
onsemi
FQPF6N80CT
Infineon Technologies
IPB020N08N5ATMA1
IXYS
IXFA230N075T2-7
Alpha & Omega Semiconductor Inc.
AOI2N60A
onsemi
FDD9407L-F085
Vishay Siliconix