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IDC08S120EX1SA3

Infineon Technologies
IDC08S120EX1SA3 Preview
Infineon Technologies
DIODE SCHOTTKY 1.2KV 7.5A WAFER
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Specifications

  • Product Status: Obsolete
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 7.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
  • Capacitance @ Vr, F: 380pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 175°C

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