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IDH05G65C5XKSA1

Infineon Technologies
IDH05G65C5XKSA1 Preview
Infineon Technologies
IDH05G65 - 600 V SILICION CARBID
$0.00
Available to order
Reference Price (USD)
1+
$2.84000
10+
$2.55400
100+
$2.09240
500+
$1.78118
1,000+
$1.50220
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 170 µA @ 650 V
  • Capacitance @ Vr, F: 160pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-2
  • Operating Temperature - Junction: -55°C ~ 175°C

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