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IDK02G120C5XTMA1

Infineon Technologies
IDK02G120C5XTMA1 Preview
Infineon Technologies
SIC DISCRETE
$3.30
Available to order
Reference Price (USD)
1+
$3.30000
500+
$3.267
1000+
$3.234
1500+
$3.201
2000+
$3.168
2500+
$3.135
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 11.8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
  • Capacitance @ Vr, F: 182pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C

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