Shopping cart

Subtotal: $0.00

IDT70P3517S250RM

Renesas Electronics America Inc
IDT70P3517S250RM Preview
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 576FCBGA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous QDR II
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.3 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 576-BBGA, FCBGA
  • Supplier Device Package: 576-FCBGA (25x25)

Related Products

Microchip Technology

AT49F002NT-90JC

ISSI, Integrated Silicon Solution Inc

IS42S32200C1-7BLI-TR

Cypress Semiconductor Corp

IS29GL512S-11TFV02

Microchip Technology

93C76AT-E/SN

Infineon Technologies

S29GL032N90FFI020

Micron Technology Inc.

MT40A1G8WE-083E AAT:B TR

Renesas Electronics America Inc

IDT71V3579YS85PF

Renesas Electronics America Inc

IDT71P73804S167BQ8

Micron Technology Inc.

MT29F32G08AFACAWP-Z:C TR

Top