IGN1011L1200
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$914.14
Available to order
Reference Price (USD)
1+
$914.14000
500+
$904.9986
1000+
$895.8572
1500+
$886.7158
2000+
$877.5744
2500+
$868.433
Exquisite packaging
Discount
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The IGN1011L1200 from Integra Technologies Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the IGN1011L1200 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Integra Technologies Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 16.8dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 160 mA
- Power - Output: 1250W
- Voltage - Rated: 180 V
- Package / Case: PL84A1
- Supplier Device Package: PL84A1
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