IGN1011L70
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$222.00
Available to order
Reference Price (USD)
1+
$222.00000
500+
$219.78
1000+
$217.56
1500+
$215.34
2000+
$213.12
2500+
$210.9
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the IGN1011L70 RF MOSFET from Integra Technologies Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The IGN1011L70's advanced design ensures maximum power transfer with minimal distortion. With Integra Technologies Inc.'s expertise in semiconductor innovation, the IGN1011L70 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 22dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 22 mA
- Power - Output: 80W
- Voltage - Rated: 120 V
- Package / Case: PL32A2
- Supplier Device Package: PL32A2
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