IGN1214M300
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$933.33
Available to order
Reference Price (USD)
1+
$933.33000
500+
$923.9967
1000+
$914.6634
1500+
$905.3301
2000+
$895.9968
2500+
$886.6635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IGN1214M300, a cutting-edge RF MOSFET transistor from Integra Technologies Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The IGN1214M300 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. Integra Technologies Inc.'s commitment to quality ensures that the IGN1214M300 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Ampleon USA Inc.
BLM8G0710S-60PBY
Ampleon USA Inc.
BLF9G38-10GU
onsemi
2SK4087LS-MG5
Ampleon USA Inc.
BLF8G38LS-75VJ
STMicroelectronics
PD85035TR-E
Wolfspeed, Inc.
CG2H80015D-GP4
Ampleon USA Inc.
BLA9G1011LS-300GU
Ampleon USA Inc.
BLP8G10S-270PWY
Ampleon USA Inc.
BLP05H6250XRGY
Ampleon USA Inc.