IGOT60R070D1AUMA3
Infineon Technologies
Infineon Technologies
GANFET N-CH
$21.96
Available to order
Reference Price (USD)
1+
$21.96000
500+
$21.7404
1000+
$21.5208
1500+
$21.3012
2000+
$21.0816
2500+
$20.862
Exquisite packaging
Discount
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Upgrade your designs with the IGOT60R070D1AUMA3 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IGOT60R070D1AUMA3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -10V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-20-87
- Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
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