IGW25N120H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 50A 326W TO247-3
$6.08
Available to order
Reference Price (USD)
1+
$6.17000
10+
$5.58500
240+
$4.64683
720+
$4.01446
1,200+
$3.44749
Exquisite packaging
Discount
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Enhance your electronic projects with the IGW25N120H3FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IGW25N120H3FKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IGW25N120H3FKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 326 W
- Switching Energy: 2.65mJ
- Input Type: Standard
- Gate Charge: 115 nC
- Td (on/off) @ 25°C: 27ns/277ns
- Test Condition: 600V, 25A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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