IGW75N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 120A TO247-3
$6.07
Available to order
Reference Price (USD)
1+
$5.86000
10+
$5.30600
240+
$4.41504
720+
$3.81419
1,200+
$3.27551
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IGW75N65H5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IGW75N65H5XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IGW75N65H5XKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 2.25mJ (on), 950µJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 28ns/174ns
- Test Condition: 400V, 75A, 8Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
Related Products
IXYS
IXYP15N65C3
IXYS
IXYP20N65C3D1M
STMicroelectronics
STGF19NC60HD
Infineon Technologies
IKW50N65SS5XKSA1
Infineon Technologies
IKD15N60R
onsemi
ISL9V3040S3ST
Infineon Technologies
AUIRGR4045D
Microchip Technology
APT68GA60B
Infineon Technologies
IKD06N60RFATMA1
Infineon Technologies