IHW30N90R
Infineon Technologies
Infineon Technologies
IGBT 900V 60A 454W TO247-3
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Upgrade your power management systems with the IHW30N90R Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IHW30N90R provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IHW30N90R for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
- Power - Max: 454 W
- Switching Energy: 1.46mJ
- Input Type: Standard
- Gate Charge: 200 nC
- Td (on/off) @ 25°C: -/511ns
- Test Condition: 600V, 30A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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