IHY20N120R3XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 40A 310W TO247HC-3
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Discover the IHY20N120R3XKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IHY20N120R3XKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IHY20N120R3XKSA1 for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
- Power - Max: 310 W
- Switching Energy: 950µJ (off)
- Input Type: Standard
- Gate Charge: 211 nC
- Td (on/off) @ 25°C: -/387ns
- Test Condition: 600V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PG-TO247HC-3
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