IKB20N60TAATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 40A TO263-3
$0.00
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Reference Price (USD)
1,000+
$1.97495
Exquisite packaging
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Optimize your power systems with the IKB20N60TAATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IKB20N60TAATMA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
- Power - Max: 156 W
- Switching Energy: 310µJ (on), 460µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 18ns/199ns
- Test Condition: 600V, 20A, 12Ohm, 15V
- Reverse Recovery Time (trr): 41 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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