IKFW50N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IKFW50N65ES5XKSA1
$7.14
Available to order
Reference Price (USD)
1+
$7.14000
500+
$7.0686
1000+
$6.9972
1500+
$6.9258
2000+
$6.8544
2500+
$6.783
Exquisite packaging
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The IKFW50N65ES5XKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IKFW50N65ES5XKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IKFW50N65ES5XKSA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 74 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
- Power - Max: 127 W
- Switching Energy: 860µJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 19ns/130ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 69 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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