IKP08N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 18A TO220-3
$2.48
Available to order
Reference Price (USD)
1+
$2.24000
10+
$2.01500
100+
$1.61940
500+
$1.33054
1,000+
$1.10244
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IKP08N65H5XKSA1 by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the IKP08N65H5XKSA1 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 18 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
- Power - Max: 70 W
- Switching Energy: 70µJ (on), 30µJ (off)
- Input Type: Standard
- Gate Charge: 22 nC
- Td (on/off) @ 25°C: 11ns/115ns
- Test Condition: 400V, 4A, 48Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: PG-TO220-3-111
Related Products
Microchip Technology
APT20GN60BDQ2G
Microchip Technology
APT75GN60LDQ3G
Infineon Technologies
IKY40N120CS6XKSA1
STMicroelectronics
STGWT40H65DFB
IXYS
IXGH60N60C3D1
Rohm Semiconductor
RGT40NS65DGC9
Infineon Technologies
AUIRG4PC40S-E
Rohm Semiconductor
RGTH60TK65GC11
STMicroelectronics
STGW80V60F
Infineon Technologies