IKQ50N120CT2XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 100A TO247-3-46
$13.04
Available to order
Reference Price (USD)
1+
$12.26000
10+
$11.26900
240+
$9.51729
720+
$8.46632
1,200+
$7.78512
Exquisite packaging
Discount
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Upgrade your power management systems with the IKQ50N120CT2XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKQ50N120CT2XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKQ50N120CT2XKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
- Power - Max: 652 W
- Switching Energy: 3.8mJ (on), 3.3mJ (off)
- Input Type: Standard
- Gate Charge: 235 nC
- Td (on/off) @ 25°C: 34ns/312ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-46
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