IKQ75N120CH3XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 150A TO247-3-46
$17.67
Available to order
Reference Price (USD)
1+
$18.05000
10+
$16.70800
240+
$14.33333
720+
$12.90865
Exquisite packaging
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Discover the IKQ75N120CH3XKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IKQ75N120CH3XKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IKQ75N120CH3XKSA1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
- Power - Max: 938 W
- Switching Energy: 6.4mJ (on), 2.8mJ (off)
- Input Type: Standard
- Gate Charge: 370 nC
- Td (on/off) @ 25°C: 34ns/282ns
- Test Condition: 600V, 75A, 6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-46
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